FNK4040PD - FNK

FNK4040PD P-Channel Power MOSFET

The FNK4040PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and unifo.

Features

● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK4040PD FNK4040PD TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Rating.