FNK4080K - FNK

FNK4080K N-Channel Power MOSFET

The FNK4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =80A RDS(ON) <6.4mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high .

Features

● VDS =40V,ID =80A RDS(ON) <6.4mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● PWM
● Load Switching TO-252 top view Package Marking and Ordering Information Device Marking Device Device Package FNK4080K FNK4080K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Curre.