FJV4109R - Fairchild Semiconductor

FJV4109R PNP Epitaxial Silicon Transistor

FJV4109R FJV4109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJV3109R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R79 B R PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwis.

Features

C= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 3.2 5.5 200 4.7 6.2 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV4109R Typical Characteristics 10k -1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = - 5V R = 4.7K IC = 10IB R = 4.7k hFE, DC CURRENT GAIN 1k -100 100 -10 10 -0.1 -1 -1 -10 -100 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 35.