FJV4105R - Fairchild Semiconductor

FJV4105R PNP Epitaxial Silicon Transistor

FJV4105R FJV4105R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV3105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R7 5 PNP Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=2.

Features

Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -20mA 3.2 0.42 4.7 0.47 -0.3 -2.5 6.2 0.52 5.5 200 30 -0.3 V pF MHz V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV4105R Typical Characteristics 1000 -100 VCE = - 5V R1 = 4.7K R2 = 10K 100 VCE = - 0.3V R1 = 4.7K R2 = 10K VI(on)[V], INPUT VOLTAGE -1 -10 -100 hFE, DC CURRENT GAIN -10 .