FJV4107R - Fairchild Semiconductor

FJV4107R PNP Epitaxial Silicon Transistor

FJV4107R FJV4107R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJV3107R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R77 R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C.

Features

tage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 15 0.42 22 0.47 -0.4 -2.5 29 0.52 5.5 200 68 -0.3 V pF MHz V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV4107R Typical Characteristics 1000 VCE = - 5V R1 = 22K R2 = 47K -100 VCE =- 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 100 -10 10 -1 1 -0.1 -1 .