FJV4108R - Fairchild Semiconductor

FJV4108R PNP Epitaxial Silicon Transistor

FJV4108R FJV4108R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJV3108R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking R1 B R2 C R7 8 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25.

Features

oltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -2mA 32 1.9 47 2.1 -0.8 -4 62 2.4 200 5.5 56 -0.3 V MHz pF V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJV4108R Typical Characteristics 1000 -100 VCE = - 5V R1 = 47K R2 = 22K VCE = - 0.3V R1 = 47K R2 = 22K VI(on)[V], INPUT VOLTAGE -1 -10 -100 -1000 hFE, DC CURRENT GAIN -10 100 -1.