FJV4111R FJV4111R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV3111R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R B R8 1 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise.
IE= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 15 5.5 200 22 29 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV4111R
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12
–0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
TRADEMARKS
The following are re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FJV4110R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
2 | FJV4112R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
3 | FJV4113R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
4 | FJV4114R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
5 | FJV4101R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
6 | FJV4102R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
7 | FJV4103R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
8 | FJV4104 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
9 | FJV4104R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
10 | FJV4105R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
11 | FJV4106R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
12 | FJV4107R |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |