FJV4106R - Fairchild Semiconductor

FJV4106R PNP Epitaxial Silicon Transistor

FJV4106R FJV4106R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJV3106R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R 76 PNP Epitaxial Silicon Transistor R1 B R2 E Absolute Maximum Ratings Ta=25°.

Features

ltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCB= -10V, IE=0 f=1.0MHz VCE= -10V, IC= -5mA VCE= -5V, IC= -100µA VCE= -0.3V, IC= -1mA 7 0.19 10 0.21 -0.3 -1.4 13 0.24 5.5 200 68 -0.3 V pF MHz V V KΩ Min. -50 -50 -0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJV4106R Typical Characteristics 1000 -100 VCE = - 5V R1 = 10K R2 = 47K VI(on)[V], INPUT VOLTAGE VCE =- 0.3V R1 = 10K R2 = 47K -10 hFE, DC CURRENT GAIN 100 10 -1 1 -0.1 -1 -.