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IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diode. Features • Maximum Junction Temperature : TJ = 175℃ • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC =.
• Maximum Junction Temperature : TJ = 175℃
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A
• Fast Switching
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inverter
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES VGES
950
V
±20
V
±30
Collector Current
@TC = 25°C
IC
@TC = 100°C
150
A
75
Pulsed Collector Current (Note 1)
ILM
225
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY75T95SQDT |
ON Semiconductor |
IGBT |
|
| 2 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 3 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|
| 4 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 5 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 6 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 7 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 8 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 9 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 10 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 11 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 12 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|