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Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS. Features • Maximum Junction Temperature TJ = 175°C • Positive Temperature Coefficient for E.
• Maximum Junction Temperature TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• Smooth and Optimized Switching
• Low Switching Loss
• RoHS Compliant
Applications
• Boost and Inverter in Solar System
• UPS
• Energy Storage System
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage
VCES
1200
V
VGES
±20
V
±30
V
Collector Current
TC = 25°C
IC
(Note 1)
200
A
TC = 100°C
Power Dissipation
TC = 25°C
PD
TC = 100°C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 4 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 6 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 7 | FGY4L160T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGY60T120SQDN |
ON Semiconductor |
IGBT |
|
| 9 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 11 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 12 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|