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IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A FGY160T65SPD-F085 Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very .
• AEC−Q101 Qualified and PPAP Capable
• Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−Efficient
• Tight Parameter Distribution
• High Input Impedance
• 100% of the Parts are Dynamically Tested
• Short circuit ruggedness > 6 ms @ 25°C
• Copacked with Soft, Fast Recovery Extremefast Diode
• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Traction Inverter for HEV/EV
• Auxiliary DC/AC Converter
• Motor Drives
• Other Power−Train Applications Requiring High Power Switch
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 3 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 4 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 5 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 7 | FGY4L160T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGY60T120SQDN |
ON Semiconductor |
IGBT |
|
| 9 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 11 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 12 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|