Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1) Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Short Circuit Withstand Time Volta.
• Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient
• Tight Parameter Distribution
• High Input Impedance
• 100% of the Parts are Dynamically Tested
• Short Circuit Ruggedness > 6 ms @ 25°C
• Copacked with Soft, Fast Recovery Extremefast Diode
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
Benefits
• Very Low Conduction and Switching Losses for a High Efficiency
Operation in Various Applications
• Rugged Transient Reliability
• Outstanding Parallel Operation Performance with Balanc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 3 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 4 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 6 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 7 | FGY4L160T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGY60T120SQDN |
ON Semiconductor |
IGBT |
|
| 9 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 11 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 12 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|