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Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch. Features • Low Conduction Loss and .
• Low Conduction Loss and Optimized Switching
• Maximum Junction Temperature − TJ = 175°C
• Positive Temperature Coefficient for Easy Parallel Operation
• High Current Capability
• 100% of the Parts are Dynamically Tested
• Short Circuit Rated
• RoHS Compliant
Applications
• Motor Control
• UPS
• General Application Requiring High Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES
1200
V
VGES
±20
±30
Collector Current
Power Dissipation
Pulsed Collect.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 2 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 3 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 4 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 6 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 7 | FGY4L160T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 8 | FGY60T120SQDN |
ON Semiconductor |
IGBT |
|
| 9 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 11 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 12 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|