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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast c.
a robust and
cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• Maximum Junction Temperature TJ = 175°C
• Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A
• 100% of the Parts Tested for ILM (Note 1)
• Soft Fast Reverse Re.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FGY100T120RWD |
ON Semiconductor |
Power IGBT |
|
| 2 | FGY100T120SWD |
ON Semiconductor |
IGBT |
|
| 3 | FGY100T65SCDT |
ON Semiconductor |
IGBT |
|
| 4 | FGY120T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 5 | FGY140T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 6 | FGY160T65SPD-F085 |
ON Semiconductor |
IGBT |
|
| 7 | FGY40T120SMD |
Fairchild Semiconductor |
Field Stop Trench IGBT |
|
| 8 | FGY4L160T120SWD |
ON Semiconductor |
N-Channel IGBT |
|
| 9 | FGY75N60SMD |
Fairchild Semiconductor |
IGBT |
|
| 10 | FGY75N60SMD |
ON Semiconductor |
IGBT |
|
| 11 | FGY75T120SQDN |
ON Semiconductor |
IGBT |
|
| 12 | FGY75T120SWD |
ON Semiconductor |
Power IGBT |
|