FDZ2552P - Fairchild Semiconductor

FDZ2552P Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ2552P minimizes both PCB space and RDS(ON). This dual BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packag.

Features

•=
  –6 A,
  –20 V. RDS(ON) = 0.045 Ω @ VGS =
  –4.5 V RDS(ON) = 0.075 Ω @ VGS =
  –2.5 V.
•= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8.
•= Ultra-thin package: less than 0.70 mm height when mounted to PCB.
•= Outstanding thermal transfer characteristics: significantly better than SO-8.
•= Ultra-low Qg x RDS(ON) figure-of-merit.
•= High power and current handling capability. Applications
•= Battery management
•= Load switch
•= Battery protection D D S S S D S Pin 1 S G S G S G Q2 S S Q1 D F2552 Q1 S D S D Q2 G Pin 1 D Bottom Top TA=25oC unless otherwise noted S Absolu.