FDZ203N - Fairchild Semiconductor

FDZ203N N-Channel 2.5V Specified PowerTrench BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, l.

Features

• 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V
• Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when mounted to PCB
• Ultra-low Qg x RDS(ON) figure-of-merit.
• High power and current handling capability. Applications
• Battery management
• Load switch
• Battery protection D D S S D P in 1 S F203N F203N S G S S G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous (N.