FDZ291P - Fairchild Semiconductor

FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET

Combining Fairchild’s advanced 1.5V specified PowerTrench process with state of the art BGA packaging, the FDZ291P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, l.

Features

•
  –4.6 A,
  –20 V RDS(ON) = 40 mΩ @ VGS =
  –4.5 V RDS(ON) = 60 mΩ @ VGS =
  –2.5 V RDS(ON) = 160 mΩ @ VGS =
  –1.5 V
• Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.85 mm height when mounted to PCB
• Outstanding thermal transfer characteristics: 4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability. S Applications
• Battery management
• Load switch
• Battery protection GATE G D Bottom Top TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, T.