Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, l.
•=
–5.5 A,
–20 V. RDS(ON) = 0.045 Ω=@ VGS =
–4.5 V RDS(ON) = 0.075 Ω @ VGS =
–2.5 V.
•= Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6
•= Ultra-thin package: less than 0.70 mm height when mounted to PCB
•= Outstanding thermal transfer characteristics: 4 times better than SSOT-6
•= Ultra-low Qg x RDS(ON) figure-of-merit.
•= High power and current handling capability.
Applications
•= Battery management
•= Load switch
•= Battery protection
D S G
D S S D
D S S D
Pin 1
S
F202
G
Pin 1
D
Bottom
Top
TA=25oC unless otherwise noted
D
Absolute Maximum Ratings
Symbol
VDSS VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDZ201N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
2 | FDZ203N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench BGA MOSFET | |
3 | FDZ2040L |
Fairchild Semiconductor |
Integrated Load Switch | |
4 | FDZ204P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench | |
5 | FDZ206P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench | |
6 | FDZ208P |
Fairchild Semiconductor |
P-Channel 30 Volt PowerTrench | |
7 | FDZ209N |
Fairchild Semiconductor |
60V N-Channel PowerTrench BGA MOSFET | |
8 | FDZ2551N |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
9 | FDZ2552P |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET | |
10 | FDZ2553N |
Fairchild Semiconductor |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench | |
11 | FDZ2554P |
Fairchild Semiconductor |
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench | |
12 | FDZ291P |
Fairchild Semiconductor |
P-Channel 1.5 V Specified PowerTrench BGA MOSFET |