FDZ209N - Fairchild Semiconductor

FDZ209N 60V N-Channel PowerTrench BGA MOSFET

Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ209N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge.

Features

• 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V
• Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when mounted to PCB
• Outstanding thermal transfer characteristics: 4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability Applications
• Solenoid Drivers D S D S S D D S S D D Index slot Index slot G D G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
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