FDZ1905PZ - Fairchild Semiconductor

FDZ1905PZ P-Channel MOSFET

MOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two common drain P-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced 1.5V PowerTrench® process with state of the art “low pitch” WL-CSP packaging proce.

Features

„ Max rS1S2(on) = 126mΩ at VGS =
  –4.5V, IS1S2 =
  –1A „ Max rS1S2(on) = 141mΩ at VGS =
  –2.5V, IS1S2 =
  –1A „ Max rS1S2(on) = 198mΩ at VGS =
  –1.8V, IS1S2 =
  –1A „ Max rS1S2(on) = 303mΩ at VGS =
  –1.5V, IS1S2 =
  –1A „ Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ High power and current handling capability „ HBM ESD protection level > 4kV (Note 3) „ RoHS Compliant tm PowerTrench® WL-CSP General Description MOSFET This device is designed specifically as a single package solution for the battery charge sw.