FDZ191P - Fairchild Semiconductor

FDZ191P P-Channel 1.5V PowerTrench WL-CSP MOSFET

„ Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS Compliant tm Designed on Fairchild's advanced 1.5V PowerTrench proces.

Features

General Description „ Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS Compliant tm Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combin.