FDZ193P - Fairchild Semiconductor

FDZ193P P-Channel 1.7V PowerTrench WL-CSP MOSFET

„ Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS Compliant tm Designed on Fairchild's advanced 1.7V PowerTrench® proce.

Features

General Description „ Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A „ Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A „ Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A „ Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ RoHS Compliant tm Designed on Fairchild's advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combi.