FDS6890A - Fairchild Semiconductor

FDS6890A Dual N-Channel MOSFET

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 7.5 A, 20 V. RDS(ON) = 0.018 Ω • • @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charg.

Features

• 7.5 A, 20 V. RDS(ON) = 0.018 Ω
•
• @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications
• DC/DC converter
• Motor drives
•
• D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 pin 1 G1 S1 SO-8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25 oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 7.5 20 2.0 Power Dissipation for D.