FDS6898AZ-F085 - ON Semiconductor

FDS6898AZ-F085 Dual N-Channel MOSFET

Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V • Low gate charge (16 nC typical) • ESD pr.

Features

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
• 9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 18 mΩ @ VGS = 2.5 V
• Low gate charge (16 nC typical)
• ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• High performance trench technology for extremely low RDS(ON)
• High power and cur.