FDS6812A - Fairchild Semiconductor

FDS6812A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are .

Features

• 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V
• Low gate charge (12 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W 6.7 35 2 Power Dissipation for Dual Operation Power Dissipation for Single Ope.