These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages. Features -5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±.
-5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications Load switch Battery protection Power management D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD G1 S1 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ±12 (Note.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6812A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
2 | FDS6814 |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
3 | FDS6875 |
Fairchild Semiconductor |
Dual P-Channel MOSFET | |
4 | FDS6875 |
ON Semiconductor |
Dual P-Channel MOSFET | |
5 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET | |
6 | FDS6890A |
ON Semiconductor |
Dual N-Channel MOSFET | |
7 | FDS6892A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
8 | FDS6892AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
9 | FDS6894A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
10 | FDS6894AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
11 | FDS6898A |
ON Semiconductor |
Dual N-Channel MOSFET | |
12 | FDS6898A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |