FDS6890A |
Part Number | FDS6890A |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain ... |
Features |
• 7.5 A, 20 V. RDS(ON) = 0.018 Ω • • @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • DC/DC converter • Motor drives • • D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 pin 1 G1 S1 SO-8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25 oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 7.5 20 2.0 Power Dissipation for D... |
Document |
FDS6890A Data Sheet
PDF 241.68KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS6890A |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDS6892A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
3 | FDS6892AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
4 | FDS6894A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
5 | FDS6894AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |