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FDS6890A |
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| Part Number | FDS6890A |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These N-Channel 2.5V specified MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gat... |
| Features |
• 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. D2 D2 5 D1 D1 6 G2 7 S2 G1 8 SO-8 pin 1 S1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg ... |
| Document |
 FDS6890A Data Sheet
PDF 193.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
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| 2 | FDS6892A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 3 | FDS6892AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 4 | FDS6894A |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
|
| 5 | FDS6894AZ |
Fairchild Semiconductor |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
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