FDS6644 - Fairchild Semiconductor

FDS6644 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 13 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V • High performance.

Features

• 13 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (25 nC typical)
• High power and current handling capability Applications
• DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25 C unless otherwise noted o 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings 30 ±16 (Note 1a) Units V V A W 13 52 2.5 1.4 1.2
  –55 to +175 Power Dissipation for Single Operatio.