FDS6609A - Fairchild Semiconductor

FDS6609A P-Channel Logic Level PowerTrench MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are require.

Features

•
  –6.3 A,
  –30 V . RDS(ON) = 0.032 Ω @ V GS = -10 V RDS(ON) = 0.05 Ω @ V GS = -4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability Applications
• DC/DC converter
• Load switch
• Motor Drive D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA =25oC unless otherwise noted Parameter Ratings
  –30 ±20 (Note 1a) Units V V A W -6.3 -40 2.5 1.2 1.0 -55 to +150 Power Dissi.