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This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features.
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7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
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Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
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DC/DC converter Motor drives
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
60
(Note 1a)
Units
V V A W
±20 7 50 2.5 1.2 1 -55 to +150
Power Dissipation fo.
FDS5690 - ON Semiconductor
Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that • 7 A, 60 V. .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS5692Z |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 2 | FDS5670 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDS5670 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS5672 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS5680 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDS5680 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDS5682 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 8 | FDS5170N7 |
Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
|
| 9 | FDS5351 |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FDS010 |
Thorlabs |
Photodiodes |
|
| 11 | FDS100BA60 |
SanRex Corporation |
DIODE MODULE |
|
| 12 | FDS100CA100 |
SanRex Corporation |
FAST RECOVERY DIODE MODULE |
|