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FDS5690 |
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| Part Number | FDS5690 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-stat... |
| Features |
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
• 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance. • Low gate charge (23nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where fast switching are required. low in-line power loss and • High performance trench technology for extremely low RDS(ON). Applications • High power and current ha... |
| Document |
 FDS5690 Data Sheet
PDF 254.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS5690 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDS5692Z |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 3 | FDS5670 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS5670 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS5672 |
Fairchild Semiconductor |
N-Channel MOSFET |
|