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Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain su.
General Description Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RoHS Compliant Application Inverter Switch Synchronous Rectifier Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless o.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS5170N7 |
Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
|
| 2 | FDS5670 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDS5670 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS5672 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDS5680 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDS5680 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FDS5682 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 8 | FDS5690 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDS5690 |
ON Semiconductor |
60V N-Channel Power MOSFET |
|
| 10 | FDS5692Z |
Fairchild Semiconductor |
N-Channel UltraFET Trench MOSFET |
|
| 11 | FDS010 |
Thorlabs |
Photodiodes |
|
| 12 | FDS100BA60 |
SanRex Corporation |
DIODE MODULE |
|