FDS5680 - ON Semiconductor

FDS5680 N-Channel MOSFET

This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • S A, −60 V. .

Features

• S A, −60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V
• Low Gate Charge (30 nC typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability
• These Device is Pb−Free and Halide Free Applications
• dc−dc Converter
• Load Switch
• Motor Drives ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS Drain−Source Voltage 60 V VGSS Gate−Source Voltage ±20 V ID Drain Current − Continuous − Pulsed (Note 1a) 8 A 50 PD Power Dissipation .