FDS5670 - Fairchild Semiconductor

FDS5670 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at .

Features

• 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 7 8 TA = 25°C unless otherwise noted Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 60 (Note 1a) Units V V A W ±20 10 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg O.