FDS5692Z - Fairchild Semiconductor

FDS5692Z N-Channel UltraFET Trench MOSFET

Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A „ Max rDS(on) = 33mΩ at VGS = 4.5V, ID.

Features

This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A „ Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A „ ESD protection diode (note 3) Applications „ Low Qgd „ DC/DC converter „ Fast switching speed D D D D SO-8 G SS S 5 6 7 8 MOSFET Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID Drain-Source Voltage Parameter Ga.