FDS4465_F085 - Fairchild Semiconductor

FDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Applications • Power management • Load switch • Battery protection Features • –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V R.

Features

•
  –13.5 A,
  –20 V. RDS(ON) = 8.5 mΩ @ VGS =
  –4.5 V RDS(ON) = 10.5 mΩ @ VGS =
  –2.5 V RDS(ON) = 14 mΩ @ VGS =
  –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability
• Qualified to AEC Q101
• RoHS Compliant DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Ope.