FDS4465 - Fairchild Semiconductor

FDS4465 P-Channel MOSFET

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V RDS(ON) = 10.5 mΩ @ VGS = –2.5 V RDS(ON) = 14 mΩ @ VGS = –1.8 V • Fast.

Features

•
  –13.5 A,
  –20 V. RDS(ON) = 8.5 mΩ @ VGS =
  –4.5 V RDS(ON) = 10.5 mΩ @ VGS =
  –2.5 V RDS(ON) = 14 mΩ @ VGS =
  –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability Applications
• Power management
• Load switch
• Battery protection D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed Parameter Ratings
  –20 ±8 (Note 1a) Units V V A W
  –13.5
  –.