This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V • Low gate charge (.
• 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
• Low gate charge (45 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
3 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET | |
4 | FDS4435A |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS4435BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
6 | FDS4435BZ |
ON Semiconductor |
P-Channel MOSFET | |
7 | FDS4435BZ-F085 |
ON Semiconductor |
P-Channel Power MOSFET | |
8 | FDS4435BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
9 | FDS4465 |
Fairchild Semiconductor |
P-Channel MOSFET | |
10 | FDS4465 |
ON Semiconductor |
P-Channel MOSFET | |
11 | FDS4465_F085 |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET | |
12 | FDS4480 |
Fairchild Semiconductor |
N-Channel MOSFET |