This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFE.
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Man.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4435BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
2 | FDS4435BZ |
ON Semiconductor |
P-Channel MOSFET | |
3 | FDS4435BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
4 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS4435A |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
8 | FDS4465 |
Fairchild Semiconductor |
P-Channel MOSFET | |
9 | FDS4465 |
ON Semiconductor |
P-Channel MOSFET | |
10 | FDS4465_F085 |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET | |
11 | FDS4470 |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FDS4480 |
Fairchild Semiconductor |
N-Channel MOSFET |