This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V • Low gate charge (29 nC) • High performance tren.
• 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V
• Low gate charge (29 nC)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Applications
• DC/DC converter
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
S S
G G S S S S
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
– Continuous
– Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
40 +30/
–20
(Note 1a)
Units
V V A W
10.8 45 2.5 1.4 1.2
–55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4488 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
4 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDS4435A |
Fairchild Semiconductor |
P-Channel MOSFET | |
6 | FDS4435BZ |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
7 | FDS4435BZ |
ON Semiconductor |
P-Channel MOSFET | |
8 | FDS4435BZ-F085 |
ON Semiconductor |
P-Channel Power MOSFET | |
9 | FDS4435BZ_F085 |
Fairchild Semiconductor |
P-Channel PowerTrench MOSFET | |
10 | FDS4465 |
Fairchild Semiconductor |
P-Channel MOSFET | |
11 | FDS4465 |
ON Semiconductor |
P-Channel MOSFET | |
12 | FDS4465_F085 |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |