FDS4465_F085 |
Part Number | FDS4465_F085 |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of ga... |
Features |
• –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V RDS(ON) = 10.5 mΩ @ VGS = –2.5 V RDS(ON) = 14 mΩ @ VGS = –1.8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High current and power handling capability • Qualified to AEC Q101 • RoHS Compliant DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Ope... |
Document |
FDS4465_F085 Data Sheet
PDF 496.03KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDS4465 |
Fairchild Semiconductor |
P-Channel MOSFET | |
2 | FDS4465 |
ON Semiconductor |
P-Channel MOSFET | |
3 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET | |
4 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET | |
5 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET |