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FDS4465 |
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| Part Number | FDS4465 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of ga... |
| Features |
• –13.5 A, –20 V. RDS(ON) = 8.5 mΩ @ VGS = –4.5 V RDS(ON) = 10.5 mΩ @ VGS = –2.5 V RDS(ON) = 14 mΩ @ VGS = –1.8 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High current and power handling capability Applications • Power management • Load switch • Battery protection D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –20 ±8 (Note 1a) Units V V A W –13.5 –... |
| Document |
 FDS4465 Data Sheet
PDF 137.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDS4465 |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDS4465_F085 |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |
|
| 3 | FDS4410 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDS4410A |
Fairchild Semiconductor |
Single N-Channel MOSFET |
|
| 5 | FDS4435 |
Fairchild Semiconductor |
P-Channel MOSFET |
|