FDP8874 - Fairchild Semiconductor

FDP8874 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using www.DataSheet4U.com either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features • rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40A • rDS(ON) = 6.6mΩ , VGS = 4.5V, ID.

Features

• rDS(ON) = 5.3mΩ , VGS = 10V, ID = 40A
• rDS(ON) = 6.6mΩ , VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low rDS(ON)
• Low gate charge Applications
• DC/DC converters
• High power and current handling capability DRAIN (FLANGE) D SOURCE DRAIN GATE G S TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 62oC/W) Pulse.