FDP8874 |
Part Number | FDP8874 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 53mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 53mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 114 A PD Total Dissipation 110 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTI... |
Document |
FDP8874 Data Sheet
PDF 278.55KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDP8870 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP8870 |
INCHANGE |
N-Channel MOSFET | |
3 | FDP8870-F085 |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | FDP8874 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP8874 |
ON Semiconductor |
N-Channel MOSFET |