This N-Channel MOSFET has been designed specifically to Features rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converter.
rDS(ON) = 8.5mΩ, VGS = 10V, ID = 40A rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. DRAIN (FLANGE) SOURCE DRAIN GATE D G S TO-220AB FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP8870 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDP8870 |
INCHANGE |
N-Channel MOSFET | |
3 | FDP8870-F085 |
ON Semiconductor |
N-Channel Power MOSFET | |
4 | FDP8874 |
Fairchild Semiconductor |
N-Channel MOSFET | |
5 | FDP8874 |
INCHANGE |
N-Channel MOSFET | |
6 | FDP8874 |
ON Semiconductor |
N-Channel MOSFET | |
7 | FDP8878 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP8860 |
Fairchild Semiconductor |
N-Channel MOSFET | |
9 | FDP8860 |
INCHANGE |
N-Channel MOSFET | |
10 | FDP8880 |
Fairchild Semiconductor |
N-Channel MOSFET | |
11 | FDP8880 |
INCHANGE |
N-Channel MOSFET | |
12 | FDP8896 |
Fairchild Semiconductor |
N-Channel MOSFET |