This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters tmM Features • rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A • rDS(ON) = 4.6mΩ, .
• rDS(ON) = 4.1mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.6mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
• RoHS Compliant
(FLANGE) DRAIN
SOURCE
DRAIN
GATE
G
TO-220AB FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed
Single Pulse.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-sour.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDP8870-F085 |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | FDP8874 |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FDP8874 |
INCHANGE |
N-Channel MOSFET | |
4 | FDP8874 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDP8876 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDP8878 |
Fairchild Semiconductor |
N-Channel MOSFET | |
7 | FDP8860 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FDP8860 |
INCHANGE |
N-Channel MOSFET | |
9 | FDP8880 |
Fairchild Semiconductor |
N-Channel MOSFET | |
10 | FDP8880 |
INCHANGE |
N-Channel MOSFET | |
11 | FDP8896 |
Fairchild Semiconductor |
N-Channel MOSFET | |
12 | FDP8896 |
INCHANGE |
N-Channel MOSFET |