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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 59mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
·With TO-220 packaging
·Drain Source Voltage-
: VDSS ≥ 30V
·Static drain-source on-resistance:
RDS(on) ≤ 59mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
92
A
PD
Total Dissipation
80
W
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS.
FDP8896 - Fairchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP8860 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDP8860 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FDP8870 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDP8870 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FDP8870-F085 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | FDP8874 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDP8874 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FDP8874 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FDP8876 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 10 | FDP8878 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FDP8880 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 12 | FDP8880 |
INCHANGE |
N-Channel MOSFET |
|