FDP8878 - Fairchild Semiconductor

FDP8878 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to Features „ rDS(ON) = 15mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters u.

Features

„ rDS(ON) = 15mΩ, VGS = 10V, ID = 40A „ rDS(ON) = 19mΩ, VGS = 4.5V, ID = 36A „ High performance trench technology for extremely low rDS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant www.DataSheet4U.com improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D DRAIN (FLANGE) SOURCE DRAIN GATE G TO-220AB FDP SERIES D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to .