FDMS3572 - ON Semiconductor

FDMS3572 N-Channel MOSFET

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Features • Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A • Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A • Typ Qg = 28 nC.

Features

• Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A
• Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A
• Typ Qg = 28 nC at VGS = 10 V
• Low Miller Charge
• Optimized Efficiency at High Frequencies
• Pb−Free, Halide Free and RoHS Compliant Applications
• DC − DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current: A − Continuous (Package limited) TC = 25°C 22 − Continuous (Silicon limited) TC = 25°C 48 − Continuous TA = 25°C (Note 1a) 8.8 − Pulsed 50 PD TJ, TS.